Mechanisms for cleaning substrate surface for hybrid bonding

ABSTRACT

The mechanisms for cleaning a surface of a semiconductor wafer for a hybrid bonding are provided. The method for cleaning a surface of a semiconductor wafer for a hybrid bonding includes providing a semiconductor wafer, and the semiconductor wafer has a conductive pad embedded in an insulating layer. The method also includes performing a plasma process to a surface of the semiconductor wafer, and metal oxide is formed on a surface of the conductive structure. The method further includes performing a cleaning process using a cleaning solution to perform a reduction reaction with the metal oxide, such that metal-hydrogen bonds are formed on the surface of the conductive structure. The method further includes transferring the semiconductor wafer to a bonding chamber under vacuum for hybrid bonding. The mechanisms for a hybrid bonding and a integrated system are also provided.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Divisional application of U.S. patent applicationSer. No. 13/949,756, filed on Jul. 24, 2013, the entire of which isincorporated by reference herein.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. Semiconductor devices are typically fabricated bysequentially depositing insulating or dielectric layers, conductivelayers, and semiconductive layers of material over a semiconductorsubstrate, and patterning the various material layers using lithographyto form circuit components and elements thereon. Many integratedcircuits are typically manufactured on a single semiconductor wafer, andindividual dies on the wafer are singulated by sawing between theintegrated circuits along a scribe line. The individual dies aretypically packaged separately, in multi-chip modules, or in other typesof packaging, for example.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area. These smallerelectronic components also require smaller packages that utilize lessarea than packages of the past, in some applications.

Three dimensional integrated circuits (3DICs) are a recent developmentin semiconductor packaging in which multiple semiconductor dies arestacked upon one another, such as package-on-package (PoP) andsystem-in-package (SiP) packaging techniques. Some 3DICs are prepared byplacing dies over dies on a semiconductor wafer level. 3DICs provideimproved integration density and other advantages, such as faster speedsand higher bandwidth, because of the decreased length of interconnectsbetween the stacked dies, as examples. However, there are manychallenges related to 3DICs.

BRIEF DESCRIPTION OF THE DRAWING

For a more complete understanding of the present disclosure, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 shows a cross-sectional representation of a portion of asemiconductor wafer, in accordance with some embodiments.

FIG. 2 shows a cross-sectional representation of a bonding structure, inaccordance with some embodiments.

FIGS. 3A-3F show cross-sectional representations of various stages ofcleaning a surface of a semiconductor wafer for hybrid bonding, inaccordance with some embodiments.

FIG. 4 shows an integrated system for hybrid bonding, in accordance withsome embodiments.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the disclosure. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Moreover,the performance of a first process before a second process in thedescription that follows may include embodiments in which the secondprocess is performed immediately after the first process, and may alsoinclude embodiments in which additional processes may be performedbetween the first and second processes. Various features may bearbitrarily drawn in different scales for the sake of simplicity andclarity. Furthermore, the formation of a first feature over or on asecond feature in the description may include embodiments in which thefirst and second features are in direct or indirect contact. The likeelements are identified by the same reference numbers, and thus are notrepeated for brevity.

Hybrid bonding is a bonding process used for bonding substrates forforming 3DIC. Hybrid bonding involves at least two types of bondings,such as metal-to-metal bonding and nonmetal-to-nonmetal bonding.

FIG. 1 shows a cross-sectional representation of a portion of asemiconductor wafer 100, in accordance with some embodiments. One ormore semiconductor wafers similar to semiconductor wafer 100 may bebonded to semiconductor wafer 100 to form 3DIC structures. Semiconductorwafer 100 includes a semiconductor substrate 102, which is made ofsilicon or other semiconductor materials. Substrate 102 may includesilicon oxide over single-crystal silicon. Compound semiconductors,GaAs, InP, Si/Ge, or SiC may be used in place of silicon. Substrate 102may be a silicon-on-insulator (SOI) or a germanium-on-insulator (GOI)substrate.

Substrate 102 includes device regions 104 formed proximate a top surfaceof substrate 102. Device regions 104 may have various device elements.Examples of device elements, which are formed in substrate 102, includetransistors (e.g., metal oxide semiconductor field effect transistors(MOSFET), complementary metal oxide semiconductor (CMOS) transistors,bipolar junction transistors (BJT), high voltage transistors, highfrequency transistors, p-channel and/or n channel field effecttransistors (PFETs/NFETs), etc.), diodes, and/or other applicableelements. Various processes are performed to form the device elements,such as deposition, etching, implantation, photolithography, annealing,and/or other suitable processes. In some embodiments, device regions 104are formed in substrate 102 in a front-end-of-line (FEOL) process. Insome embodiments, substrate 102 further includes through-substrate vias(TSVs) 105 filled with a conductive material(s) that providesconnections from a bottom side to a top side of substrate 102.

A metallization structure 106 is formed over substrate 102, e.g., overdevice regions 104. In some embodiments, metallization structure 106 isformed in a back-end-of-line (BEOL) process. Metallization structure 106includes interconnect structures, such as conductive lines 108, vias110, and conductive pads (conductive structures) 112. Conductive pads112 are contact pads (or bond pads) formed in a top surface ofsemiconductor wafer 100, as shown in FIG. 1. Some vias 110 coupleconductive pads 112 to conductive lines 108 in metallization structure106, and other vias 110, along with conductive metal lines 108, coupleconductive pads 112 to device regions 104 of substrate 102. Vias 110 mayalso connect conductive lines 108 in different metallization layers (notshown).

In some embodiments, conductive lines 108, vias 110, and conductive pads112 respectively include conductive materials such as copper (Cu),aluminum (Al), tungsten (W), titanium (Ti), or tantalum (Ta).

As shown in FIG. 1, conductive pads 112 are formed in an insulatingmaterial 114. Insulating material 114 is a dielectric material, such assilicon dioxide, silicon oxide, silicon nitride, silicon oxynitride, orundoped silicon glass (USG), phosphorus doped oxide (PSG), boron dopedoxide (BSG), or boron phosphorus doped oxide (BPSG). In someembodiments, insulating layer 114 is formed by plasma-enhanced chemicalvapor deposition (PECVD). In some embodiments, insulating material 114includes multiple dielectric layers of dielectric materials. However,metallization structure 106 shown is merely for illustrative purposes.Metallization structure 106 may include other configurations and mayinclude one or more conductive lines and via layers.

A region M in FIG. 1 is used to illustrate the mechanisms for cleaning asurface of semiconductor wafer 100 for hybrid bonding in followingdescriptions, in accordance with some embodiments. As shown in FIG. 1,region M includes conductive pad 112 disposed above via 110. Conductivepad 112 and via 110 are surrounded by insulating material 114.

FIG. 2 shows a cross-sectional representation of a bonding structure, inaccordance with some embodiments. In FIG. 2, semiconductor wafer 100 isbonded to semiconductor wafer 150 by hybrid bonding. It is noted thatalthough FIG. 2 only shows some elements of semiconductor wafers 100 and150 (e.g. those elements shown in region M in FIG. 1), other elementsmay also be included in semiconductor wafers 100 and 150. As describedabove, wafer 100 includes conductive pad 112 formed over via 110.Conductive pad 112 and via 110 are surrounded by insulating material114. In some embodiments, an opening is formed and filled with aconductive material 132. In some embodiments, conductive material 132 ismade of copper (Cu), aluminum (Al), tungsten (W), titanium (Ti),tantalum (Ta), or other applicable materials. In some embodiments,conductive material 132 is made of copper or copper alloy. Due to theconcern of metal (such as copper) diffusion in insulating layer 114,conductive pad 112 also includes a diffusion barrier layer 113 to blockcopper diffusion, in accordance with some embodiments. However, whenconductive material 132 is not copper (e.g. Al), diffusion barrier layer113 is not required. In some embodiments, diffusion barrier layer 113 ismade of titanium (Ti), tantalum (Ta), titanium nitride (TiN), tantalumnitride (TaN), or aluminum nitride (AlN), or multiple layers thereof orcombinations thereof. In some embodiments, diffusion barrier layer 113is made of a copper diffusion barrier material. In some embodiments,diffusion barrier layer 113 is made of polymers, such asbenzocyclobutene (BCB) polymer. In some embodiments, diffusion barrierlayer 113 has a thickness in a range from about 10 Å to about 1000 Å.

Semiconductor wafer 150 is similar to semiconductor wafer 100 andincludes a conductive pad 152, a via 156, and an insulating material154. Conductive pad 152 is similar to conductive pad 112, and via 156 issimilar to via 110. Insulating material 154 is similar to insulatingmaterial 114. Conductive pad 152 includes a conductive material 162 anda diffusion barrier layer 153. Conductive material 162 is similar toconductive material 132, and diffusion barrier layer 153 is similar todiffusion barrier layer 113.

Before semiconductor wafer 100 is bonded to semiconductor wafer 150,semiconductor wafers 100 and 150 are aligned, such that conductive pad112 can be bonded to conductive pad 152 and insulating material 114 canbe bonded to insulating material 154 during the subsequent hybridbonding. In some embodiments, the alignment of semiconductor wafers 100and 150 is achieved by using an optical sensing method.

After the alignment is performed, semiconductor wafers 100 and 150 arepressed together and the temperature is raised to allow the bonds to beformed between the conductive layers and between the insulating layersof semiconductor wafers 100 and 150. As shown in FIG. 2, the bondingstructure has an interface 130 between two conductive pads 112 and 152with metal-to-metal bonding and an interface 140 between two insulatingmaterials 114 and 154 with nonmetal-to-nonmetal bonding. In someembodiments, the nonmetal-to-nonmetal bonding isdielectric-to-dielectric bonding.

Some crack may form at interface 130 between two conductive pads 112 and152 due to insufficient cleaning of metal surface and/or formation ofmetal oxide at interface 130. Cracking at interface 130 is undesirableand can reduce yield. Therefore, mechanisms for cleaning the metalsurfaces of conductive materials 132 and 152 and removal of metal oxideson the metal surfaces are needed.

FIGS. 3A-3F show cross-sectional representations of various stages ofcleaning the surface of semiconductor wafer 100 for hybrid bonding, inaccordance with some embodiments. In order to keep the descriptionsimplified, FIG. 3A only shows a portion of the semiconductor wafer 100.

As shown in FIG. 3A, an opening 111 is formed in insulating material114. In some embodiments, insulating material 114 is patterned by usinga photolithography process to form opening 111. In addition, due to theconcern of metal (such as copper) diffusion in insulating layer 114,diffusion barrier layer 113 is deposited to line opening 111 inaccordance with some embodiments.

As shown in FIG. 3B, conductive material 132 is used to fill opening111. In some embodiments, conductive material 132 is formed by adeposition method. The deposition method includes a plating method (suchas an electrical chemical plating (ECP) method).

The excess portion of conductive material 132 is removed from a topsurface of insulating material 114 to form conductive pad 112, as shownin FIG. 3C. In some embodiments, conductive material 132 outside ofopening 111 is removed by a chemical mechanical polishing (CMP) process10. In some embodiments, after CMP process 10, a metal oxide layer 115is formed on the surface of conductive pad 112. In some embodiments,metal oxide layer 115 is made of copper oxide (CuO_(x)). Metal oxidewill result in weakening the bonding strength of metal-to-metal bonding,and therefore metal oxide needs to be removed. In order to remove metaloxide layer 115, a post CMP cleaning process is performed. In someembodiments, a cleaning solution used in the post CMP cleaning processincludes deionized (DI) water, NH₄OH, or a variety of acids and bases.The cleaning process may include a brush clean, a mega-sonic clean, orcombinations thereof. Alternatively, the cleaning process may includeother types of chemical and cleaning procedures. In some embodiments,after the post CMP cleaning process, a portion of metal oxide layer 115still remains on the top surface of conductive pad 112.

The top surface of semiconductor wafer 100 is treated to assist hybridbonding in subsequent processes. As shown in FIG. 3D, the top surface ofsemiconductor wafer 100 is treated by a plasma process 20. During plasmaprocess 20, the top surface of semiconductor wafer 100 is exposed to theplasma, such that insulating material 114 can be bonded to insulatingmaterial 154 (as shown in FIG. 2) in subsequent processes. In someembodiments, insulating material 114 is SiO₂, and Si—O bonds are formedat the top surface of insulating material 114 after plasma process 20.In some embodiments, nitrogen (N₂) or argon (Ar) is used in plasmaprocess 20. In some embodiments, plasma process 20 includes using Ar ina range from about 80% to about 100% and using H₂ in a range from about0% to about 20% (in volume). In some embodiments, plasma process 20includes using He in a range from about 80% to about 100% and using H₂in a range from about 0% to about 20% (in volume). When hydrogen is usedin plasma process 20, a portion of metal oxide layer 115 is converted tometal. However, some metal oxide still remains on conductive pad 112. Insome other embodiments, the top surface of semiconductor wafer 100 istreated by other types of treatments.

After plasma process 20, residues 150 are formed on the top surface ofsemiconductor wafer 100, as shown in FIG. 3E. As mention above, somemetal oxide layer 115 still remains on the top surface of conductive pad112, as shown in FIG. 3F.

Referring to FIG. 3F, after plasma process 20, the top surface ofsemiconductor wafer 100 is cleaned by a cleaning process. FIG. 3F showsa cleaning solution supplier 30 (such as nozzle) positioned over the topsurface of semiconductor wafer 100 to supply a cleaning solution 35.Cleaning solution 35 may include citric acid, hydrofluoric acid (HF), ortetramethylammonium hydroxide (TMAH). In some embodiments, residues 150are removed by cleaning solution 35, and metal oxide layer 115 isreduced to form metal-hydrogen bonds during the cleaning process.

In some embodiments, cleaning solution 35 contains citric acid (CA), andthe cleaning process includes the following reactions.

2CuOx+2CA→2[Cu/CA]+xO₂  (1)

[Cu/CA]+H→[Cu/H]+CA  (2)

Referring to equation (1), the metal oxide, such as CuOx, of the metaloxide layer 115 is reacted with citric acid to form a complex [Cu/CA].The citric acid is replaced by the hydrogen ion (H⁺) in cleaningsolution 35 to form [Cu/H], which contains copper-hydrogen bonds (seeequation (2)). Therefore, metal oxide layer 115 is reduced to formmetal-hydrogen bonds by a reduction reaction during the cleaningprocess. In addition, these metal-hydrogen bonds protect the surface ofconductive pad 112 from oxidation before hybrid bonding is performed.Moreover, the metal-hydrogen bonds can be easily broken to formmetal-to-metal bonding during hybrid bonding.

In some embodiments, the citric acid has a concentration in a range fromabout 0.25% to about 10%. In some embodiments, the hydrofluoric acid(HF) has a concentration in a range from 0.1% to about 0.5%. In someother embodiments, tetramethylammonium hydroxide (TMAH) has aconcentration in a range from about 0.25% to about 0.5%.

The processes described above and illustrated in FIG. 3A to FIG. 3F arealso performed to semiconductor wafer 150 shown in FIG. 2, and detailsof the processes are not repeated herein. After both wafers 100 and 150are cleaned by the cleaning process, semiconductor wafers 100 and 150are aligned, such that conductive pad 112 is aligned to conductive pad152 and insulating layer 114 is aligned to insulating layer 154 (asshown in FIG. 2).

After the alignment is performed, semiconductor wafers 100 and 150 arehybrid bonded together by applying pressure and heat. Hybrid bonding maybe performed in an inert environment filled with such as N₂, Ar, He, orcombinations thereof. In some embodiments, the pressure for hybridbonding is in a range from about 10 kPa to about 200 kPa. In someembodiments, the heat applied to bond semiconductor wafers 100 and 150includes an anneal operation at a temperature in a range from about 300°C. to about 400° C. Alternatively, the pressure and temperature used forhybrid bonding may be adjusted as required.

Since the top surfaces of semiconductor wafers 100 and 150 are cleaned,no residues 150 and metal oxide layer 115 are left to block the bondingbetween semiconductor wafers 100 and 150. As a result, the bondingstrength between conductive pads 112 and 152 is improved, and theinterfacial cracking is resolved or greatly improved.

FIG. 4 shows an integrated system 400 for hybrid bonding, in accordancewith some embodiments. Integrated system 400 includes a plasma chamber410, a transfer chamber 420, a cleaning chamber 430, and a hybridbonding chamber 440. Plasma chamber 410, cleaning chamber 430, andhybrid bonding chamber 440 are attached aside of transfer chamber 420.Since plasma chamber 410, cleaning chamber 430, and hybrid bondingchamber 440 are all coupled to transfer chamber 420, semiconductorwafers 100 and 150 can be transferred from one chamber to anotherchamber via transfer chamber 420 under vacuum. In some embodiments, arobot (not shown) is disposed in transfer chamber 420, and the robot isconfigured to transfer semiconductor wafers 100 and 150 to the desiredchamber. For example, the robot is configured to transfer semiconductorwafers 100 and 150 from plasma chamber 410 (for plasma treatment) tocleaning chamber 430 (for cleaning) and then to hybrid bonding chamber440 (for hybrid bonding).

For example, semiconductor wafer 100 is first placed on the robot intransfer chamber 420. Afterwards, the robot transfers semiconductorwafer 100 to plasma chamber 410 for plasma process 20 shown in FIG. 3D.After plasma process 20, semiconductor wafer 100 is transferred tocleaning chamber 430 by the robot for the cleaning process shown in FIG.3F. Semiconductor wafer 100 is then transferred to hybrid bondingchamber 440 and remained in hybrid bonding chamber 440 untilsemiconductor wafer 150 is ready to be bonded. Semiconductor wafer 150is also processed in integrated system 400 by the processes describedabove. That is, semiconductor wafer 150 is also place in transferchamber 420 and then transferred to plasma chamber 410, cleaning chamber430, and hybrid bonding chamber 440. After semiconductor wafer 100 and150 are both transferred into hybrid bonding chamber 440, semiconductorwafer 100 is bonded to semiconductor wafer 150 to form the bondingstructure by hybrid bonding in hybrid bonding chamber 440. In someembodiments, the processes that transferring semiconductor wafers 100and 150 from one chamber to another chamber are all performed undervacuum, such that reformation of metal oxide is avoided.

In the process described above, the cleaning process is performed toremove residues 150 and metal oxide layer 115 before hybrid bonding. Inaddition, since semiconductor wafer 100 and 150 are transferred from onechamber to another chamber in integrated system 400 under vacuum,semiconductor wafers 110 and 150 do not leave integrated system 400during the processes. Therefore, reformation of metal oxides (such asCuOx) on the top surface of conductive pads 112 and 152 is avoided, andthe hybrid bonding strength between two bonding semiconductor wafers 100and 150 is improved.

Embodiments of mechanisms for cleaning surfaces of semiconductor wafersfor hybrid bonding are provided. Each semiconductor wafer includes aconductive pad surrounded by an insulating layer and a metal oxide layerformed on the top surface of the conductive pad. The surfaces of thesemiconductor wafers are treated with plasma first and then cleaned byusing a cleaning process after a plasma process. During the cleaningprocess, residues formed on the top surfaces of the semiconductor wafersare removed by a cleaning solution. In addition, the metal oxide layerformed on the conductive pads of the semiconductor wafers are reduced bythe acid in the cleaning solution, and metal-hydrogen bonds are formedon the conductive pads to protect the conductive pads. The cleanedsemiconductor wafers are bonded together to form a bonding structure byhybrid bonding. The processes of preparing and bonding the semiconductorwafers, including the plasma process, the cleaning process, and hybridbonding, are performed in an integrated system. The wafers aretransferred from one chamber to another in the integrated system undervacuum to prevent metal oxidation. Therefore, reformation of metal oxidecan be avoided, and the hybrid bonding quality is greatly improved.

In some embodiments, a method for cleaning a surface of a semiconductorwafer for a hybrid bonding is provided. The method includes providing asemiconductor wafer, and the semiconductor wafer has a conductive padembedded in an insulating layer and metal oxide formed on a surface ofthe conductive pad. The method also includes performing a plasma processto a surface of the semiconductor wafer. The method further includesperforming a cleaning process using a cleaning solution to the surfaceof the semiconductor wafer after the plasma process, and the metal oxideis reduced and metal-hydrogen bonds are formed on the surface of theconductive pad. The method further includes transferring thesemiconductor wafer to a bonding chamber under vacuum for hybridbonding.

In some embodiments, a hybrid bonding for semiconductor wafers isprovided. The hybrid bonding includes providing a first semiconductorwafer and a second semiconductor wafer, and the first semiconductorwafer and the second semiconductor wafer each has a conductive padembedded in an insulating layer. The hybrid bonding also includesperforming a plasma process to surfaces of the first semiconductor waferand the second semiconductor wafer respectively. The hybrid bondingfurther includes performing a cleaning process using a cleaning solutionto the surface of the first semiconductor wafer and the surface of thesecond semiconductor wafer respectively. The hybrid bonding alsoincludes bonding the first semiconductor wafer to the secondsemiconductor wafer.

In some embodiments, an integrated system for hybrid bonding isprovided. The integrated system includes a plasma chamber coupled to atransfer chamber and a cleaning chamber coupled to the transfer chamber.The integrated system further includes a hybrid bonding chamber coupledto the transfer chamber, and the hybrid bonding chamber is configured tobond two semiconductor wafers to form metal-to-metal bonding andnon-metal-to-non-metal bonding.

Although embodiments of the present disclosure and their advantages havebeen described in detail, it should be understood that various changes,substitutions and alterations can be made herein without departing fromthe spirit and scope of the disclosure as defined by the appendedclaims. For example, it will be readily understood by those skilled inthe art that many of the features, functions, processes, and materialsdescribed herein may be varied while remaining within the scope of thepresent disclosure. Moreover, the scope of the present application isnot intended to be limited to the particular embodiments of the process,machine, manufacture, composition of matter, means, methods and stepsdescribed in the specification. As one of ordinary skill in the art willreadily appreciate from the disclosure of the present disclosure,processes, machines, manufacture, compositions of matter, means,methods, or steps, presently existing or later to be developed, thatperform substantially the same function or achieve substantially thesame result as the corresponding embodiments described herein may beutilized according to the present disclosure. Accordingly, the appendedclaims are intended to include within their scope such processes,machines, manufacture, compositions of matter, means, methods, or steps.

What is claimed is:
 1. An integrated system for hybrid bonding, comprising: a plasma chamber coupled to a transfer chamber; a cleaning chamber coupled to the transfer chamber; and a hybrid bonding chamber coupled to the transfer chamber, wherein the hybrid bonding chamber is configured to bond two semiconductor wafers to form metal-to-metal bonding and non-metal-to-non-metal bonding.
 2. The integrated system as claimed in claim 1, further comprising: a robot disposed in the transfer chamber, wherein the robot is configured to transfer the semiconductor wafers from the plasma chamber to the cleaning chamber and then to the hybrid bonding chamber.
 3. The integrated system as claimed in claim 1, further comprising: a cleaning supplier positioned in the cleaning chamber, wherein the cleaning supplier is configured to supply a cleaning solution to reduce a metal oxide layer on conductive pads of the semiconductor wafers.
 4. The integrated system as claimed in claim 1, wherein the cleaning supplier is configured to supply the cleaning solution to form metal-hydrogen bonds on the conductive pads of the semiconductor wafers.
 5. The integrated system as claimed in claim 3, wherein the conductive pad includes a conductive material made of copper (Cu), aluminum (Al), tungsten (W), titanium (Ti), or tantalum (Ta).
 6. The integrated system as claimed in claim 4, wherein the conductive pad is surrounded by an insulating layer.
 7. The integrated system as claimed in claim 6, wherein the insulating layer is made of silicon dioxide, silicon oxide, silicon nitride, silicon oxynitride, or undoped silicon glass (USG), phosphorus doped oxide (PSG), boron doped oxide (BSG), or boron phosphorus doped oxide (BPSG).
 8. The integrated system as claimed in claim 3, wherein the cleaning solution comprises citric acid, hydrofluoric acid (HF), or tetramethylammonium hydroxide (TMAH).
 9. The integrated system as claimed in claim 8, wherein the citric acid has a concentration in a range from about 0.25% to about 10%.
 10. The integrated system as claimed in claim 8, wherein the hydrofluoric acid (HF) has a concentration in a range from about 0.1% to about 0.5%.
 11. The integrated system as claimed in claim 8, wherein the tetramethylammonium hydroxide (TMAH) has a concentration in a range from about 0.25% to about 0.5%.
 12. The integrated system as claimed in claim 2, wherein transferring the semiconductor wafer from the plasma chamber to the cleaning chamber and then to the hybrid bonding chamber are performed under vacuum.
 13. The integrated system as claimed in claim 1, further comprising: a gas supplier positioned in the plasma chamber, wherein the gas supplier is configured to supply hydrogen (H₂), argon (Ar) or nitrogen (N₂) gas to a surface of the semiconductor wafer.
 14. The integrated system as claimed in claim 1, further comprising: a gas supplier positioned in the hybrid bonding chamber, wherein the gas supplier is configured to supply nitrogen (N₂), argon (Ar), helium (He) or combinations thereof.
 15. The integrated system as claimed in claim 1, wherein the hybrid bonding chamber is configured to perform a hybrid bonding process to a first semiconductor wafer and a second semiconductor wafer.
 16. The integrated system as claimed in claim 15, wherein the hybrid bonding process is performed in the following sequence: performing the plasma process to the first semiconductor wafer; after performing the plasma process to the first semiconductor wafer, performing the cleaning process to the first semiconductor wafer; after performing the cleaning process to the first semiconductor wafer, transferring the first semiconductor wafer to a hybrid bonding chamber; after transferring the first semiconductor wafer to the hybrid bonding chamber, performing the plasma process to the second semiconductor wafer; after performing the plasma process to the second semiconductor wafer, performing the cleaning process to the second semiconductor wafer; after performing the cleaning process to the second semiconductor wafer, transferring the second semiconductor wafer to the hybrid bonding chamber; after transferring the second semiconductor wafer to the hybrid bonding chamber, bonding the first semiconductor wafer to the second semiconductor wafer.
 17. The integrated system as claimed in claim 1, wherein a pressure in the hybrid bonding chamber is in a range from about 10 kPa to about 200 kPa.
 18. The integrated system as claimed in claim 1, wherein a temperature in the hybrid bonding chamber is in a range from about 300° C. to about 400° C.
 19. The integrated system as claimed in claim 1, wherein the hybrid bonding chamber is filled with nitrogen (N₂), argon (Ar), helium (He) or combinations thereof.
 20. The integrated system as claimed in claim 1, wherein the plasma chamber, the cleaning chamber and the hybrid bonding chamber are attached aside of the transfer chamber. 